3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations

3C-SiC Heteroepitaxy on Hexagonal SiC Substrates

The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 μm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray technique...

Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

Alex A. Volinsky Department of Mechanical Engineering, University of South Florida Tampa, Florida 33620 Stephen E. Saddow Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620; and Department of Molecular Pharmacology and Physiology, University of South Florida, Tampa, Florida 33620 Francesco La Via IMM-CNR, sezione di Catania, Stradale Primosole 50, 95121, Cat...

Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates

A thin, chemically inert 3C-SiC layer between GaN and Si helps not only to avoid the "melt-back" effect, but also to inhibit the crack generation in the grown GaN layers. The quality of GaN layer is heavily dependent on the unique properties of the available 3C-SiC/Si templates. In this paper, the parameters influencing the roughness, crystalline quality, and wafer bow are investigated and engi...

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates